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 Semiconductor
DN500
NPN Silicon Transistor
Description
* Extremely low collector-to-emitter saturation voltage ( VC E ( S A T )=0.2V Typ. @IC /IB =3A/150mA) * Suitable for low voltage large current drivers * Complementary pair with DP500 * Switching Application
Ordering Information
Type NO. DN500 Marking DN500 Package Code TO-92
Outline Dimensions
unit : mm
PIN Connections 1. Emitter 2. Collector 3. Base
KST-9086-002
1
DN500
Absolute maximum ratings
Characteristic
Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector dissipation Junction temperature Storage temperature
(Ta=25 C)
Symbol
VC B O VC E O VE B O IC PC Tj T stg
Ratings
15 12 5 5 625 150 -55~150
Unit
V V V A mW C C
Electrical Characteristics
Characteristic
Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-Emitter on voltage Base-Emitter on voltage Transition frequency Collector output capacitance
(Ta=25 C)
Symbol
BVCBO BVCEO BVEBO ICBO IEBO h FE1 h FE2 VCE(sat1) VBE(sat) fT C ob
Test Condition
IC =50A, IE=0 IC =1mA, IB=0 IE=50A, IC =0 VCB=15V, IE=0 VEB=4V, IC =0 VCE=2V, IC =500mA VCE=2V, IC =3A IC =3A, IB=150mA IC =3A, IB=150mA VCB=5V, IC =500mA VCB=10V, IE=0, f=1MHz
Min.
15 12 5 160 40 -
Typ.
150 -
Max.
0.1 0.1 320 0.3 1.2 50
Unit
V V V A A V V MHz pF
KST-9086-002
2
DN500
Electrical Characteristic Curves
Fig. 1 Pc - Ta Fig. 2 Ic - VB E
Fig. 3 hFE - IC
Fig. 4 VCE(sat) - IC
KST-9086-002
3


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